Well-suppressed interface states and improved transport properties of AlGaN/GaN MIS-HEMTs with PEALD SiN gate dielectric
S. Zhang, Wei Ke, Y.C. Zhang, X. J. Chen, Shuling Huang, Hongbu Yin, Gebing Liu, Tingting Yuan, Yue Zheng, X.H. Wang, Xiangyang Liu
Topics & Concepts
OptoelectronicsMaterials scienceDielectricInterface (matter)Gallium nitrideGate dielectricNanotechnologyPhysicsTransistorLayer (electronics)Composite materialCapillary numberQuantum mechanicsVoltageCapillary actionGaN-based semiconductor devices and materialsSemiconductor materials and devicesGa2O3 and related materials