Understanding the influence of Lu, La and Ga active elements on the bonding properties of Sn/SiO2 interfaces from first principle calculations
Weibing Guo, Zongyu She, Shuo Yang, Haitao Xue, Xiaoming Zhang
Topics & Concepts
Materials scienceCovalent bondIonic bondingDopingChemical bondStackingLattice (music)Charge densityCrystallographyThermodynamicsIonNuclear magnetic resonanceChemistryPhysicsAcousticsOrganic chemistryOptoelectronicsQuantum mechanicsElectronic Packaging and Soldering Technologies3D IC and TSV technologiesIntermetallics and Advanced Alloy Properties