Monolithically Integrated GaN Comparator Based on Complementary Logic
Yutao Geng, Zheyang Zheng, Li Zhang, Yan Cheng, Tao Chen, Sirui Feng, Yat Hon Ng, Jiahui Sun, Ji Shu, Hang Liao, Han Xu, Haochen Zhang, Kevin J. Chen
Abstract
A gallium nitride (GaN) two-stage comparator based on complementary logic (CL) architecture is demonstrated and systematically investigated. The comparator features monolithically integrated enhancement-mode n-channel and p-channel GaN field-effect transistors on a commercial p-GaN gate high-electron-mobility transistor (HEMT) platform. Benefiting from energy-efficient CL configuration, the two-stage comparator exhibits rail-to-rail operation from 25 °C to 200 °C with reduced power consumption. The temperature-dependent voltage transfer characteristics, output waveforms, and frequency responses of the fabricated two-stage comparator are studied in detail to reveal limiting factors and corresponding mechanisms of n-/p-FETs on circuit performance. These results can provide valuable insights for the further development of GaN CL integrated circuits (ICs) for next-generation power conversion systems.