Achieving real Ohmic contact by the dual protection of outer layer atoms and surface functionalization in 2D metal Mxenes/MoSi<sub>2</sub>N<sub>4</sub> heterostructures
Xin He, Wenzhong Li, Zhen Gao, Zhenhua Zhang, Yao He
Abstract
The quality of contact between a metal electrode and a two-dimensional (2D) semiconductor is simultaneously determined by the Schottky barrier height (SBH), the tunneling probability ( P TB ), and the Fermi level pinning (FLP), which also impact the performance of the device.
Topics & Concepts
MXenesOhmic contactMaterials scienceSchottky barrierHeterojunctionMetalQuantum tunnellingSurface modificationLayer (electronics)SemiconductorElectrodeCondensed matter physicsOptoelectronicsNanotechnologyMetallurgyChemistryPhysical chemistryPhysicsDiodeGraphene research and applications2D Materials and ApplicationsMXene and MAX Phase Materials