RuVO2 alloy epitaxial films: Lowered insulator–metal transition temperature and retained modulation capacity
Hao Lu, Lufeng Chen, RuiQi Cao, Xin Tao, Xinru Wang, Mingkai Li, Pai Li, Yinmei Lu, Peter J. Klar, Yunbin He
Abstract
Alloying VO2 by Ru incorporation (RuxV1−xO2) should decrease the insulator–metal-transition (IMT) temperature due to the unique semi-metallic properties of RuO2. We deposit high-quality RuxV1−xO2 thin films by pulsed laser deposition on (0001) sapphire substrates. We investigate the structural, electrical, and optical properties of the RuxV1−xO2 alloy films using x-ray diffraction, x-ray photoelectron spectroscopy, UV-Vis–NIR spectrophotometry, and four-point-probe resistivity measurements. Our results confirm that Ru alloying of VO2 reduces effectively the IMT temperature while retaining the IMT characteristics of the material.
Topics & Concepts
Materials scienceAlloySapphireX-ray photoelectron spectroscopyMetal–insulator transitionEpitaxyElectrical resistivity and conductivityPulsed laser depositionThin filmDiffractionAnalytical Chemistry (journal)MetalPhotoemission spectroscopyTransition metalTransition temperatureOptoelectronicsMetallurgyLaserComposite materialChemical engineeringNanotechnologyCondensed matter physicsOpticsChemistryCatalysisLayer (electronics)SuperconductivityBiochemistryPhysicsEngineeringChromatographyElectrical engineeringTransition Metal Oxide NanomaterialsGa2O3 and related materialsAdvanced Memory and Neural Computing