Litcius/Paper detail

Design of a Dual-Band Outphasing Power Amplifier Based on Multiple Topology Fitting

Jiayu Huang, Weiwei Wang, Kuiwen Xu, Jialin Cai, Jingzhou Pang, Giovanni Crupi, Gaofeng Wang, Shichang Chen

2024IEEE Transactions on Circuits & Systems II Express Briefs10 citationsDOI

Abstract

This paper presents the design of a dual-band outphasing power amplifier (OPA) using multiple topology fitting. By adding extra transmission lines to the traditional non-commensurate transmission lines, the design space for the output combiner is largely expanded. Different line combinations with good load modulation effects can be chosen according to frequency and circuit dimension. As a proof of concept, a prototype OPA operating at 2.6 and 3.5 GHz is fabricated based on two 10-W GaN HEMTs. The fabricated circuit achieves saturation output power of 44.4 and 44.3 dBm at the two selected frequency bands, with accompanying peak drain efficiencies of 69.5% and 69.2%. Meanwhile, the corresponding efficiencies at 6-dB power back-off points are 62.4% and 63.5%, respectively.

Topics & Concepts

AmplifierElectric power transmissionMulti-band deviceTopology (electrical circuits)Transmission linePower (physics)dBmElectrical engineeringElectronic engineeringEngineeringComputer sciencePhysicsCMOSAntenna (radio)Quantum mechanicsAdvanced Power Amplifier DesignRadio Frequency Integrated Circuit DesignGaN-based semiconductor devices and materials