A 210–291-GHz (8×) Frequency Multiplier Chain With Low Power Consumption in 0.13-μm SiGe
Thomas Buecher, Stefan Malz, Klaus Aufinger, Ullrich R. Pfeiffer
Abstract
This letter presents a 210-291-GHz 8× multiplier chain in the 0.13-μm SiGe Bipolar CMOS (BiCMOS) technology for the broadband generation of carrier signals, imaging, and spectroscopy. It consists of three cascaded Gilbert-cell doublers with compact input matching networks to generate quadrature collector currents in the switching quad for broadband flat conversion gain. The multiplier chain generates a saturated output power of -7.7 dBm at 244.5 GHz with a 3-dB bandwidth of 81 GHz. It consumes 0.24 W of dc power and occupies 0.86 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> of chip area.
Topics & Concepts
BroadbandFrequency multiplierBiCMOSMultiplier (economics)CMOSElectrical engineeringBandwidth (computing)Power consumptionPhysicsOptoelectronicsSilicon-germaniumMaterials scienceElectronic engineeringEngineeringPower (physics)TelecommunicationsSiliconTransistorOpticsVoltageEconomicsQuantum mechanicsMacroeconomicsRadio Frequency Integrated Circuit DesignSemiconductor materials and devicesPhotonic and Optical Devices