Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric
Jiabiao Chen, Zhaochao Liu, Xinyue Dong, Zhansheng Gao, Yuxuan Lin, Yuyu He, Yingnan Duan, Tong‐Huai Cheng, Zhengyang Zhou, Huixia Fu, Feng Luo, Jinxiong Wu
Abstract
Abstract Single-crystalline high- κ dielectric materials are desired for the development of future two-dimensional (2D) electronic devices. However, curent 2D gate insulators still face challenges, such as insufficient dielectric constant and difficult to obtain free-standing and transferrable ultrathin films. Here, we demonstrate that ultrathin Bi 2 SiO 5 crystals grown by chemical vapor deposition (CVD) can serve as excellent gate dielectric layers for 2D semiconductors, showing a high dielectric constant (>30) and large band gap (~3.8 eV). Unlike other 2D insulators synthesized via in-plane CVD on substrates, vertically grown Bi 2 SiO 5 can be easily transferred onto other substrates by polymer-free mechanical pressing, which greatly facilitates its ideal van der Waals integration with few-layer MoS 2 as high- κ dielectrics and screening layers. The Bi 2 SiO 5 gated MoS 2 field-effect transistors exhibit an ignorable hysteresis (~3 mV) and low drain induced barrier lowering (~5 mV/V). Our work suggests vertically grown Bi 2 SiO 5 nanoflakes as promising candidates to improve the performance of 2D electronic devices.