Tunable electronic properties and negative differential resistance effect of the intrinsic type-III ZrS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.svg" display="inline" id="d1e711"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math>/WTe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.svg" display="inline" id="d1e719"><mml:msub><mml:mrow/><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:math> van der Waals heterostructure
Zhouyu Guo, Kaige Hu, Jinnan Su, Junjie Chen, Huafeng Dong, Min Pan, Zhaogang Nie, Fu‐Gen Wu
Topics & Concepts
Quantum tunnellingHeterojunctionvan der Waals forceElectronic band structureType (biology)Field (mathematics)Field-effect transistorMaterials scienceElectric fieldCondensed matter physicsElectronic structureTransistorTopology (electrical circuits)OptoelectronicsPhysicsVoltageElectrical engineeringQuantum mechanicsMathematicsMoleculeBiologyEcologyPure mathematicsEngineering2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications