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Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

Ali Saeidi, Teodor Rosca, Elvedin Memišević, Igor Stolichnov, Matteo Cavalieri, Lars‐Erik Wernersson, Adrian M. Ionescu

2020Nano Letters92 citationsDOIOpen Access PDF

Abstract

as ferroelectric materials.

Topics & Concepts

Materials scienceNegative impedance converterNanowireQuantum tunnellingOptoelectronicsTransistorThermionic emissionField-effect transistorCapacitanceFerroelectricityHeterojunctionSubthreshold slopeVoltageElectrical engineeringPhysicsElectronDielectricVoltage sourceQuantum mechanicsElectrodeEngineeringAdvancements in Semiconductor Devices and Circuit DesignFerroelectric and Negative Capacitance DevicesSemiconductor materials and devices
Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects | Litcius