A SmNiO<sub>3</sub> memristor with artificial synapse function properties and the implementation of Boolean logic circuits
Lei Li, Dongqing Yu, Yiheng Wei, Yong Sun, Jianhui Zhao, Zhenyu Zhou, Jie Yang, Zichang Zhang, Xiaobing Yan
Abstract
) is presented with excellent electrical performance, including three orders of magnitude higher current switching ratio and good repeatability, and can achieve bidirectional conductance regulation like weight modulation in bio-synapse. Furthermore, the synaptic like characteristics of the device have been mimicked successfully, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), classical double pulse spike time-dependent plasticity (classical pair-STDP), triplet spike time-dependent plasticity (triplet-STDP), short-term plasticity (STP), long-term plasticity (LTP), the refractory period phenomenon and learning and forgetting rules. In particular, two synaptic devices and a leaky integrate-and-fire (LIF) neuron device are used to achieve a logic gate circuit to realize "AND", "OR", and "NOT" functions. The device paves the way for the application of high-density circuits in artificial intelligence.