Thermal oxidation-enabled β-Ga <sub>2</sub> O <sub>3</sub> /GaN heterojunction for broadband self-powered UV detection
Jili Jiang, Jiangshuai Luo, Ke Ding, Shuren Zhou, Lijuan Ye, Hong Zhang, Honglin Li, Di Pang, Yan Kun Tang, Peng Yu, Wanjun Li
Abstract
We report a self-powered broadband UV photodetector based on a β-Ga 2 O 3 /GaN heterojunction formed via one-step thermal oxidation. The device exhibits high responsivities of 153.9 mA/W (254 nm, 300 μW/cm 2 , 0 V) and 52.3 mA/W (365 nm, 300 μW/cm 2 , 0 V), with excellent detectivity (1.25 × 10 12 Jones) and fast response (189 ms/96 ms). The type-I band alignment and low interfacial trap density enable efficient carrier separation. Single-pixel imaging of characters and patterns under UVA and UVC illumination further demonstrates its application potential. This work provides a viable route for high-performance, self-powered broadband UV photodetectors using thermal oxidation.