10 kV SiC MOSFET Power Module with Double-Sided Jet-Impingement Cooling
Mark Cairnie, Christina DiMarino
Abstract
A 10 kV, 50 A SiC MOSFET phase-leg package is proposed which combines an innovative lateral spring-pin terminal with wirebond-less molybdenum interconnects to enable < 10 nH parasitic inductance and double-sided cooling. The module utilizes additively-manufactured, direct jet-impingement coolers, integrated into the module housing to cool the four, 3 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rd</sup> generation 10 kV SiC MOSFET dies. When compared to conventional cold plates, the integrated coolers allow for the removal of the baseplate and cold plate fixtures/clamps, while also alleviating certain insulation concerns. A mix of experimental measurements and analytical models were used to verify the thermal performance of the coolers and compare them to commercially available options. According to the experimental results, the integrated coolers in conjunction with the double-sided cooling can dissipate a heat load of 200 W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> with inlet temperature of 45°C while maintaining a maximum junction temperature < 160° C. The double-sided cooling provided a 30 % decrease in effective θjc, from 0.253 K/W to 0.176 K/W per switch position, when compare to the equivalent single-sided cooled package.