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Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories

Mohamed Belmoubarik, Muftah Al‐Mahdawi, George Machado, Tomohiro Nozaki, Cláudia Coelho, M. Sahashi, Weng Kung Peng

2024Journal of Materials Science Materials in Electronics11 citationsDOI

Topics & Concepts

Materials scienceFerroelectricitySchottky barrierSchottky diodeOptoelectronicsNon-volatile memoryPolarization (electrochemistry)Condensed matter physicsChemistryDiodeDielectricPhysicsPhysical chemistryAdvanced Memory and Neural ComputingFerroelectric and Piezoelectric MaterialsTransition Metal Oxide Nanomaterials
Resistive switching and Schottky barrier modulation at CoPt/ ferroelectric-like MgZnO interface for non-volatile memories | Litcius