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A comprehensive ARPES study on the type-II Dirac semimetal candidate Ir1−xPtxTe2

Juan Jiang, Sangjae Lee, Fucong Fei, Fengqi Song, E. Vescovo, Konstantine Kaznatcheev, F. J. Walker, Charles Ahn

2020APL Materials14 citationsDOIOpen Access PDF

Abstract

The transition metal dichalcogenide Ir1−xPtxTe2 displays both superconductivity and a topological band structure. Using angle-resolved photoemission spectroscopy, we obtain a comprehensive understanding of the three-dimensional electronic structure in the normal state of Ir1−xPtxTe2 for doping levels from x = 0.1 to 0.4, which spans the composition range of a superconducting state to a non-superconducting state. Many features of the electronic structure can be attributed to strong Te–Te interactions between the layers of the layered crystal structure and can be resolved by photon energy dependent measurements. We demonstrate that the type-II Dirac fermions can be successfully tuned via Pt doping, where the Dirac point lies close to the Fermi level for x = 0.1. The band evolution vs doping provides a clearer understanding of the relationship between the superconductivity and electronic structure. In addition, the β band in the superconducting samples locates the system close to a type-II van Hove singularity, where spin triplet paring symmetry has been predicted. Our results provide a comprehensive understanding of the band structure of Ir1−xPtxTe2, and we discuss the possibilities of the existence of topological superconductivity in this system.

Topics & Concepts

Angle-resolved photoemission spectroscopySuperconductivityCondensed matter physicsElectronic structurePhotoemission spectroscopyElectronic band structureVan Hove singularityFermi levelSemimetalDopingDirac (video compression format)Materials sciencePhysicsTopology (electrical circuits)Band gapX-ray photoelectron spectroscopyQuantum mechanicsNuclear magnetic resonanceElectronMathematicsNeutrinoCombinatoricsTopological Materials and Phenomena2D Materials and ApplicationsGraphene research and applications