InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics
Liangmei Wu, Jinan Shi, Zhang Zhou, Jiahao Yan, Aiwei Wang, Ce Bian, Jiajun Ma, Ruisong Ma, Hongtao Liu, Jiancui Chen, Yuan Huang, Wu Zhou, Lihong Bao, Min Ouyang, Sokrates T. Pantelides, Hong‐Jun Gao
Abstract
Two-dimensional (2D) materials as channel materials provide a promising alternative route for future electronics and flexible electronics, but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric. Here we demonstrate an indium selenide (InSe)/hexagonal boron nitride (hBN)/graphite heterostructure as a 2D field-effect transistor (FET), with InSe as channel material, hBN as dielectric, and graphite as gate. The fabricated FETs feature high electron mobility up to 1,146 cm2V−1s−1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric. Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained. Taking advantages of the mechanical flexibility of these materials, we integrated the heterostructured InSe FET on a flexible substrate, exhibiting little modification of device performance at a high strain level of up to 2%. Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.