Reliability characteristics of metal/ferroelectric-HfO<sub>2</sub>/IGZO/metal capacitor for non-volatile memory application
Fei Mo, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi
Abstract
Abstract A metal/ferroelectric (FE)-HfO 2 /IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 10 8 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.
Topics & Concepts
CapacitorMaterials scienceFerroelectricityReliability (semiconductor)MetalOptoelectronicsFerroelectric capacitorData retentionLayer (electronics)Non-volatile memoryComposite materialElectrical engineeringVoltageMetallurgyPower (physics)EngineeringQuantum mechanicsPhysicsDielectricFerroelectric and Negative Capacitance DevicesSemiconductor materials and devicesAdvanced Memory and Neural Computing