Electrical transport properties of highly doped N-type GaN materials
L. Kończewicz, E. Litwin‐Staszewska, Marcin Zając, Henryk Turski, Michał Boćkowski, Dario Schiavon, Mikolaj Chlipała, Małgorzata Iwińska, Paweł Nita, Sandrine Juillaguet, Sylvie Contreras
Abstract
Abstract This paper presents a comparative study of electron transport phenomena in n-type gallium nitride strongly doped, above the Mott transition, with silicon and germanium. The samples under study were grown by molecular beam epitaxy, metal-organic vapor phase epitaxy and halide vapor phase epitaxy. The temperature dependence of resistivity and Hall Effect was investigated at temperatures ranging from 10 K up to 650 K. The measurements at sub-room temperatures allow the study of scattering mechanisms related to extrinsic material properties. The observed temperature dependences of the electrical transport properties were analyzed in the frame of the model taking into account a typical scattering mechanism and degree of degeneracy of free carrier electron gas. The limitations of the applied models will be presented.