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Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells

Hideaki Murotani, Hiroyuki Miyoshi, Ryohei Takeda, Hiroki Nakao, M. Ajmal Khan, Noritoshi Maeda, Masafumi Jo, Hideki Hirayama, Yoichi Yamada

2020Journal of Applied Physics44 citationsDOI

Abstract

The correlation between the recombination dynamics of excitons and the internal quantum efficiency (IQE) of AlGaN-based UV-A multiple quantum wells (MQWs) was studied via photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. The probability ratio of the capture of excitons by nonradiative recombination centers (NRCs) and the radiative recombination of excitons was evaluated individually via two different experimental analyses. The IQE was evaluated via temperature- and excitation power density-dependent PL measurements and its dependence on excitation density was analyzed using a rate equation model based on the radiative and nonradiative recombination of excitons. Moreover, the radiative and nonradiative recombination lifetimes were evaluated via temperature-dependent TRPL measurements; furthermore, they were analyzed as functions of temperature and excitation energy density. The probability ratios obtained from the two individual analyses were in agreement. This quantitative agreement indicated that the analysis based on the radiative and nonradiative recombination processes of excitons, which included the process of filling NRCs, was valid for AlGaN-based UV-A MQWs.

Topics & Concepts

ExcitonPhotoluminescenceSpontaneous emissionRecombinationQuantum wellQuantum efficiencyExcitationRadiative transferAtomic physicsSpectroscopyNon-radiative recombinationPhysicsMolecular physicsMaterials scienceChemistryOptoelectronicsCondensed matter physicsOpticsLaserQuantum mechanicsGeneBiochemistryGaN-based semiconductor devices and materialsSemiconductor Quantum Structures and DevicesGa2O3 and related materials
Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells | Litcius