Substitutional doped GeSe: tunable oxidative states with strain engineering
Zheng Shu, Yongqing Cai
Abstract
Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting. The work shows dynamic oxidative states of the dopants under strain in GeSe, an emerging 2D chalcogenide with potential nanoelectronics applications.
Topics & Concepts
DopantMaterials scienceDopingBand gapFermi levelChalcogenideCondensed matter physicsNanotechnologyChemical physicsOptoelectronicsElectronChemistryPhysicsQuantum mechanics2D Materials and ApplicationsPerovskite Materials and ApplicationsMXene and MAX Phase Materials