Room-temperature continuous-wave operations of GaN-based vertical-cavity surface-emitting lasers with buried GaInN tunnel junctions
Kazuki Kiyohara, Mahito Odawara, Tetsuya Takeuchi, Satoshi Kamiyama, Motoaki Iwaya, Isamu Akasaki, Tatsuma Saito
Abstract
Abstract We report GaN-based vertical-cavity surface-emitting lasers (VCSELs) with buried GaInN tunnel junctions (TJs). Under room-temperature continuous-wave operation, the VCSEL with an 8 μ m aperture exhibited a low operating voltage of 5.3 V at 10 kA cm −2 and a differential resistance of 110 Ω. In addition, the VCSEL with a 10 μ m aperture showed a threshold current of 14.4 mA and a peak output power of 2.0 mW. An influence of an absorption loss at the GaInN TJ on laser performance was estimated using an analysis of a one-dimensional optical intensity profile based on a cross-sectional STEM image.
Topics & Concepts
Vertical-cavity surface-emitting laserMaterials scienceOptoelectronicsLaserAperture (computer memory)Tunnel junctionOpticsContinuous waveVoltageElectrical engineeringPhysicsQuantum tunnellingAcousticsEngineeringSemiconductor Lasers and Optical DevicesSemiconductor Quantum Structures and DevicesGaN-based semiconductor devices and materials