A Surface Potential Based Compact Model for Ferroelectric a-InGaZnO-TFTs Toward Temperature Dependent Device Characterization
Lihua Xu, Jingrui Guo, Chen Sun, Zijie Zheng, Yannan Xu, Shijie Huang, Kaizhen Han, Wei Wei, Zean Guo, Xiao Gong, Qing Luo, Lingfei Wang, Ling Li
Abstract
An a-IGZO based ferroelectric-TFT (FeTFT) is promising in future BEOL-compatible architecture designs. Despite its excellent nonvolatility, a complicated coupling of intrinsic transistor properties, trapping dynamics and ferroelectric effects has been reported and hinders the in-depth understanding of high temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> ) reliability. To address this issue, a surface potential based compact model has been developed by combining Preisach theory, disorder physics and Newton correction. It is calibrated to experiments under various voltages ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}$ </tex-math></inline-formula> ) and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> (up to 100 °C). <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> -dependent transport mechanism is validated with an effective mobility extracted, and a memory window (MW) increases with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> resulting from coupling effects. Besides, pulse width (PW) dependent ferroelectric switching dynamics are studied via the Monte Carlo method, predicting a possible decrease of MW at small PW and high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> . With such a physics-based modeling approach to accurate device characterization, it assists <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}$ </tex-math></inline-formula> -aware circuit design with reliability considerations.