Highly Sensitive Detection of Urea Using Si Electrolyte-Gated Transistor with Low Power Consumption
W. K. Choi, Bo Jin, Seonghwan Shin, Jeonghyeon Do, Jongmin Son, Kihyun Kim, Jeong‐Soo Lee
Abstract
We experimentally demonstrate Si-based electrolyte-gated transistors (EGTs) for detecting urea. The top-down-fabricated device exhibited excellent intrinsic characteristics, including a low subthreshold swing (SS) (~80 mV/dec) and a high on/off current ratio (~107). The sensitivity, which varied depending on the operation regime, was analyzed with the urea concentrations ranging from 0.1 to 316 mM. The current-related response could be enhanced by reducing the SS of the devices, whereas the voltage-related response remained relatively constant. The urea sensitivity in the subthreshold regime was as high as 1.9 dec/pUrea, four times higher than the reported value. The extracted power consumption of 0.3 nW was extremely low compared to other FET-type sensors.