Side-jump scattering enhanced spin Hall effect in SrTiO3-implanted Pt
Zijin Lin, Xinkai Xu, Lei Zhang, Junwen Wei, Zhiyong Zhong, Xiaoli Tang, Lichuan Jin
Abstract
A spin Hall effect (SHE) enables the electrical generation and detection of spin currents for promising applications in spintronics, but heavy metals with low spin Hall angle θSH limit the development of SHE devices. In this work, we have introduced dielectric oxide material SrTiO3 into Pt by magnetron sputtering and measured the θSH on the NiCo/Pt1–x(STO)x heterostructure through spin-torque ferromagnetic resonance. Our results demonstrate that the maximum spin Hall angle in Pt0.98(STO)0.02 is 0.121 ± 0.003, which is approximately twice that of pure Pt (0.064 ± 0.003). Moreover, theoretical analysis has revealed that the spin Hall angle arises from a complementary interplay between intrinsic and extrinsic mechanisms, namely, the strong spin–orbit coupling in Pt for the intrinsic mechanism and side-jump scattering caused by scalar potential and lattice expansion at dielectric impurities for the extrinsic mechanism. This interplay significantly contributes to enhancing the spin Hall angle. This work demonstrates an effective strategy for fabricating high-performance spin Hall materials with low resistivity, large spin Hall angle, and excellent compatibility with semiconductor processes in low-power spin-torque devices.