Ionizing radiation hardness tests of GaN HEMTs for harsh environments
Alexis C. Vilas-Bôas, M. A. A. de Melo, R.B.B. Santos, Renato Giacomini, N. H. Medina, L. E. Seixas, Saulo Finco, F.R. Palomo, Amor Romero-Maestre, M. Guazzelli
Topics & Concepts
Materials scienceOptoelectronicsIrradiationTransistorIonizing radiationRadiation hardeningRadiationAbsorbed doseGallium nitrideWide-bandgap semiconductorElectrical engineeringNanotechnologyEngineeringOpticsPhysicsVoltageNuclear physicsLayer (electronics)GaN-based semiconductor devices and materialsSemiconductor materials and devicesSilicon Carbide Semiconductor Technologies