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Characterization and Optimal Control of Totem-Pole PFC Converter With High Frequency GaN HEMTs and Low Frequency Si Diodes

Yihang Jia, Hongfei Wu, Yang Liu, Xinyu Xu, Yue Liu, Fan Yang, Yan Xing

2020IEEE Transactions on Industrial Electronics25 citationsDOI

Abstract

A cost-effective totem-pole power factor correction converter with high-frequency gallium nitride high electron-mobility transistors and low-frequency Si diodes is investigated in this article. The reverse recovery characteristics of low-frequency diodes are evaluated experimentally. With the slow recovery characteristics, a negative current can flow through the low frequency diode, so that soft-switching and critical mode operation is achieved easily. However, if the duration of the negative current exceeds the reverse recovery time of the low-frequency diode, the diode will switch at high frequency, leading to severe losses and losing control of the inductor current. In order to avoid this issue, an adaptive off-time soft-switching strategy is adopted, and discontinuous conduction mode operation is suggested near the zero crossing of the grid voltage. Furthermore, since only the low-frequency grid current is sampled, this control strategy has the merits of low requirements on control resources and low cost. Experimental results of a 400W prototype are provided to verify the effectiveness of the proposed control strategy.

Topics & Concepts

DiodeInductorMaterials scienceGallium nitrideOptoelectronicsTransistorLow frequencyPower semiconductor deviceVoltageElectrical engineeringElectronic engineeringEngineeringTelecommunicationsComposite materialLayer (electronics)Advanced DC-DC ConvertersMultilevel Inverters and ConvertersSilicon Carbide Semiconductor Technologies
Characterization and Optimal Control of Totem-Pole PFC Converter With High Frequency GaN HEMTs and Low Frequency Si Diodes | Litcius