Optoelectromechanical phase shifter with low insertion loss and a 13π tuning range
Thomas Grottke, Wladick Hartmann, Carsten Schuck, Wolfram H. P. Pernice
Abstract
We present an on-chip optoectromechanical phase shifter with low insertion loss and low half-wave voltage using a silicon nitride platform. The device is based on a slot waveguide in which the electrostatic displacement of mechanical structures results in a change of the effective refractive index. We achieve insertion loss below 0.5 dB at a wavelength of 1550 nm in a Mach-Zehnder Interferometer with an extinction ratio of 31 dB. With a phase tuning length of 210 µm, we demonstrate a half-wave voltage of V π = 2.0 V and a 2π phase shift at V 2π = 2.7 V. We measure phase shifts up to 13.3 π at 17 V. Our devices can be operated in the MHz range and allow for the generation of sub-µs pulses.