Electric field and strain engineering tuning of 2D Gr/α-Ga<sub>2</sub>O<sub>3</sub> van der Waals heterostructures
Xiangyu Wu, Zhiyang Xie, Yu Zhang, Xuefei Liu, Jinshun Bi, Wentao Wang, Zhaofu Zhang, Ruyue Cao
Abstract
The Gr/α-Ga 2 O 3 ↑ and Gr/α-Ga 2 O 3 ↓ vdWHs exhibit n-type Schottky contacts with a minimal Schottky barrier height of 0.043 eV and n-type Ohmic contacts, respectively.
Topics & Concepts
Ohmic contactMaterials scienceSchottky barrierHeterojunctionStrain (injury)van der Waals forceElectric fieldStrain engineeringSchottky diodeCondensed matter physicsType (biology)Metal–semiconductor junctionNanotechnologyOptoelectronicsPhysicsQuantum mechanicsBiologySiliconEcologyDiodeAnatomyLayer (electronics)Molecule2D Materials and ApplicationsGa2O3 and related materialsMXene and MAX Phase Materials