C<sub>3</sub>N<sub>2</sub>: the missing part of highly stable porous graphitic carbon nitride semiconductors
Xinyong Cai, Jiao Chen, Hongyan Wang, Yuxiang Ni, Yuanzheng Chen, R. Bruce King
Abstract
With two suitable organic units (TAPA and HADQ), H-C 3 N 2 and T-C 3 N 2 are designed and proposed based on the high possibility for experimental realization. They show different structural features and exceptional optoelectronic properties.
Topics & Concepts
Graphitic carbon nitrideRealization (probability)NitrideMaterials sciencePorositySemiconductorCarbon nitrideOptoelectronicsCarbon fibersNanotechnologyChemistryComposite materialMathematicsPhotocatalysisComposite numberOrganic chemistryCatalysisLayer (electronics)Statistics2D Materials and ApplicationsAdvanced Photocatalysis TechniquesMXene and MAX Phase Materials