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3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor

Balamurugan Deivendran, V. M. Shinde, Harish Kumar, N. Eswara Prasad

2020Journal of Crystal Growth17 citationsDOI

Topics & Concepts

Grashof numberReynolds numberMaterials scienceDeposition (geology)MechanicsResponse surface methodologyComputational fluid dynamicsBuoyancyNatural convectionThermodynamicsChemistryHeat transferPhysicsNusselt numberChromatographyTurbulencePaleontologyBiologySedimentSilicon Carbide Semiconductor TechnologiesSemiconductor materials and devicesHigh-Temperature Coating Behaviors
3D Modeling and optimization of SiC deposition from CH3SiCl3/H2 in a commercial hot wall reactor | Litcius