Tuning the high-κ oxide (HfO2, ZrO2)/4H-SiC interface properties with a SiO2 interlayer for power device applications
Zhen Wang, Zhaofu Zhang, Chen Shao, John Robertson, Sheng Liu, Yuzheng Guo
Topics & Concepts
Materials scienceOptoelectronicsDielectricHigh-κ dielectricBand gapStack (abstract data type)OxideGate dielectricInterface (matter)Engineering physicsElectrical engineeringComputer scienceVoltageComposite materialTransistorCapillary actionCapillary numberMetallurgyEngineeringProgramming languageSemiconductor materials and devicesSilicon Carbide Semiconductor TechnologiesMXene and MAX Phase Materials