Ultrahigh overall-performance phase-change memory by yttrium dragging
Bin Liu, Kaiqi Li, Jian Zhou, Liangcai Wu, Zhitang Song, Weisheng Zhao, Stephen R. Elliott, Zhimei Sun
Abstract
Benefiting from the dragging effect of yttrium, an ultrahigh overall-performance phase-change memory is reported, including low resistance drift, high data retention, low power consumption, fast operating speed, and good cycling endurance.
Topics & Concepts
YttriumMaterials sciencePhase-change memoryData retentionCyclingPower consumptionPower (physics)Phase (matter)OptoelectronicsComposite materialMetallurgyThermodynamicsLayer (electronics)HistoryOrganic chemistryPhysicsOxideChemistryArchaeologyPhase-change materials and chalcogenidesAdvanced Memory and Neural ComputingNeural Networks and Reservoir Computing