Integration of Self‐Passivated Topological Electrodes for Advanced 2D Optoelectronic Devices
Zihao Huang, Zhongtong Luo, Ziwen Deng, Mengmeng Yang, Wei Gao, Jiandong Yao, Yu Zhao, Huafeng Dong, Zhaoqiang Zheng, Jingbo Li
Abstract
Abstract With the rapid development of two‐dimensional semiconductor technology, the inevitable chemical disorder at a typical metal–semiconductor interface has become an increasingly serious problem that degrades the performance of 2D semiconductor optoelectronic devices. Herein, defect‐free van der Waals contacts have been achieved by utilizing topological Bi 2 Se 3 as the electrodes. Such clean and atomically sharp contacts avoid the consumption of photogenerated carriers at the interface, enabling a markedly boosted sensitivity as compared to counterpart devices with directly deposited metal electrodes. Typically, the device with 2D WSe 2 channel realizes a high responsivity of 20.5 A W −1 , an excellent detectivity of 2.18 × 10 12 Jones, and a fast rise/decay time of 41.66/38.81 ms. Furthermore, high‐resolution visible‐light imaging capability of the WSe 2 device is demonstrated, indicating its promising application prospect in future optoelectronic systems. More inspiringly, the topological electrodes are universally applicable to other 2D semiconductor channels, including WS 2 and InSe, suggesting its broad applicability. These results open fascinating opportunities for the development of high‐performance electronics and optoelectronics.