Unveiling the influence of selective-area-regrowth interfaces on local electronic properties of GaN p-n junctions for efficient power devices
Alexander S. Chang, Bingjun Li, Sizhen Wang, Sam Frisone, R. S. Goldman, Jung Han, Lincoln J. Lauhon
Topics & Concepts
Materials scienceDopantCathodoluminescenceSpreading resistance profilingOptoelectronicsDopingTrenchAnalytical Chemistry (journal)LuminescenceNanotechnologyLayer (electronics)ChemistryChromatographyGaN-based semiconductor devices and materialsSemiconductor materials and devicesMetal and Thin Film Mechanics