E-mode All-GaN-Integrated cascode MISHEMT with GaN/InAlGaN/GaN backbarrier for high power switching performance: Simulation study
Preeti Singh, Vandana Kumari, Manoj Saxena, Mridula Gupta
Topics & Concepts
TransconductanceMaterials scienceCascodeOptoelectronicsThreshold voltageVoltagePower (physics)TransistorElectrical engineeringPhysicsAmplifierEngineeringCMOSQuantum mechanicsGaN-based semiconductor devices and materialsSilicon Carbide Semiconductor TechnologiesRadio Frequency Integrated Circuit Design