Fe<sub>3</sub>GaTe<sub>2</sub>/MoSe<sub>2</sub> ferromagnet/semiconductor 2D van der Waals heterojunction for room-temperature spin-valve devices
Hongfei Yin, Pengzhen Zhang, Jin Wen, Boyuan Di, Hao Wu, Gaojie Zhang, Wenfeng Zhang, Haixin Chang
Abstract
A 2D room-temperature, ferromagnetic crystal based 2D vdW Fe 3 GaTe 2 /MoSe 2 /Fe 3 GaTe 2 ferromagnet/semiconductor 2D van der Waals heterojunction is realized with a magnetoresistance of 3.7% at room temperature and 37.7% at 2 K under 10 nA working current.
Topics & Concepts
FerromagnetismHeterojunctionCondensed matter physicsvan der Waals forceMagnetoresistanceMaterials scienceSemiconductorMagnetic semiconductorCrystal (programming language)Spin (aerodynamics)OptoelectronicsPhysicsMagnetic fieldQuantum mechanicsComputer scienceThermodynamicsMoleculeProgramming language2D Materials and ApplicationsMXene and MAX Phase MaterialsGraphene research and applications