Investigation of correlative parameters to evaluate EUV lithographic performance of PMMA
Kanghyun Kim, Jong-Won Lee, Byeong‐Gyu Park, Hyun‐Taek Oh, Yejin Ku, Jin‐Kyun Lee, Geunbae Lim, Sangsul Lee
Abstract
interference lithography with 250 nm pitch grating agreed well with the results calculated using the lumped parameter model. The experimental results demonstrated that the equipment and test protocol can be used for EUV material infrastructure evaluation in academia and in industry.
Topics & Concepts
Extreme ultraviolet lithographyCorrelativeLithographyMaterials scienceOptoelectronicsPhilosophyLinguisticsAdvancements in Photolithography TechniquesIntegrated Circuits and Semiconductor Failure AnalysisElectron and X-Ray Spectroscopy Techniques