Halogenated-edge polymeric semiconductor for efficient spin transport
Xueli Yang, Ankang Guo, Jie Yang, Jinyang Chen, Ke Meng, Shunhua Hu, Ran Duan, Ming‐Liang Zhu, Wenkang Shi, Qin Yang, Rui Zhang, Haijun Yang, Jikun Li, Lidan Guo, Xiangnan Sun, Yunqi Liu, Yunlong Guo
Abstract
Organic semiconductors (OSCs) are featured by weak spin-orbit coupling due to their light chemical element composition, which enables them to maintain spin orientation for a long spin lifetime and show significant potential in room-temperature spin transport. Carrier mobility and spin lifetime are the two main factors of the spin transport performance of OSCs, however, their ambiguous mechanisms with molecular structure make the development of spintronic materials really stagnant. Herein, the effects of halogen substitution in bay-annulated indigo-based polymers on carrier mobility and spin relaxation have been systematically investigated. The enhanced carrier mobility with an undiminished spin lifetime contributes to a 3.7-fold increase in spin diffusion length and a record-high magnetoresistance of 8.7% at room temperature. By analyzing the spin-orbit coupling and hyperfine interaction, it was found that the distance of the substitution site from the conjugated center and the nitrogen atoms in the molecules play crucial roles in spin relaxation. Based on the above results, we proposed a molecular design strategy of halogen substitution far from conjugate center to enhance spin transport efficiency, presenting a promising avenue for advancing the field of organic spintronics. The spin transport mechanism remains unclear for organic semiconductors. Here, authors investigate the effect of halogen substitution in bay-annulated indigo-based polymers and reveal the distance of substitution site from conjugated center and nitrogen atoms play crucial roles in spin relaxation.