Ta2O5-y-based ReRAM device with annealing-free Ag:ZrNx-based bilayer selector device
Donghyun Kim, Ju Hyun Park, Dong Su Jeon, Tukaram D. Dongale, Tae Geun Kim
Topics & Concepts
Materials scienceResistive random-access memoryOptoelectronicsStackingCrossbar switchAnnealing (glass)BilayerVoltageElectronic engineeringElectrical engineeringChemistryBiochemistryMembraneComposite materialEngineeringOrganic chemistryAdvanced Memory and Neural ComputingFerroelectric and Negative Capacitance DevicesTransition Metal Oxide Nanomaterials