Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
N. Manikanthababu, T. Basu, Saumitra Vajandar, S. V. S. Nageswara Rao, B.K. Panigrahi, T. Osipowicz, A. P. Pathak
Topics & Concepts
Materials scienceFluenceSwift heavy ionIrradiationGate dielectricAnnealing (glass)TrappingOptoelectronicsHigh-κ dielectricOxideDielectricAnalytical Chemistry (journal)IonX-ray photoelectron spectroscopyGate oxideChemistryNuclear magnetic resonanceVoltagePhysicsComposite materialNuclear physicsEcologyOrganic chemistryChromatographyQuantum mechanicsMetallurgyBiologyTransistorSemiconductor materials and devicesIntegrated Circuits and Semiconductor Failure AnalysisAdvanced Memory and Neural Computing