Ferroelectric nanodomains in epitaxial GeTe thin films
Boris Croes, Fabien Cheynis, Yide Zhang, Cédric Voulot, Kokou D. Dorkenoo, S. Cherifi, Cristian Mocuta, M. Texier, Thomas W. Cornelius, Ο. Thomas, Marie‐Ingrid Richard, Pierre Müller, Stefano Curiotto, Frédéric Leroy
Abstract
In this paper the authors have grown germanium telluride thin films by molecular beam epitaxy on silicon as a proposed system for ferroelectric-based spintronics with high spin-orbit coupling. The structure of ferroelectric domains is explored in a wide range of film thickness. After elucidating the domain wall type and domain volume fraction, the stability of ferroelectric domains with respect to thermomechanical stress is discussed.
Topics & Concepts
Materials scienceFerroelectricitySpintronicsEpitaxyMolecular beam epitaxyThin filmOptoelectronicsCondensed matter physicsNanotechnologyLayer (electronics)FerromagnetismDielectricPhysicsFerroelectric and Piezoelectric MaterialsPhase-change materials and chalcogenidesSolid-state spectroscopy and crystallography