Engineered high endurance in WO <sub>3</sub> -based resistive switching devices via a guided filament approach
Ziyi Yuan, Babak Bakhit, Yixuan Liu, Zhuotong Sun, Giulio I. Lampronti, Xinjuan Li, Simon M. Fairclough, Benson Kunhung Tsai, Abhijeet Choudhury, Caterina Ducati, Haiyan Wang, Markus Hellenbrand, Judith L. MacManus‐Driscoll
Abstract
Resistive switching devices are promising candidates for the next generation of nonvolatile memory and neuromorphic computing applications. Despite the advantages in retention and on/off ratio, filamentary-based memristors still suffer from challenges, particularly endurance (flash being a benchmark system showing 10 4 to 10 6 cycles) and uniformity. Here, we use WO 3 as a complementary metal-oxide semiconductor–compatible switching oxide and demonstrate a proof-of-concept materials design approach to enhance endurance and device-to-device uniformity in WO 3 -based memristive devices while preserving other performance metrics. These devices show stable resistive switching behavior with >10 6 cycles, >10 5 -second retention, >10 on/off ratio, and good device-to-device uniformity, without using current compliance. All these metrics are achieved using a one-step pulsed laser deposition process to create self-assembled nanocomposite thin films that have regular guided filaments of ≈100-nanometer pitch, preformed between WO 3 grains and interspersed smaller Ce 2 O 3 grains.