Unveiling Alternating Current Electronic Properties at Ferroelectric Domain Walls
Jan Schultheiß, Tadej Rojac, Dennis Meier
Abstract
Abstract Ferroelectric domain walls exhibit a range of interesting electrical properties and are now widely recognized as functional 2D systems for the development of next‐generation nanoelectronics. A major achievement in the field is the development of a fundamental framework that explains the emergence of enhanced electronic direct‐current conduction at the domain walls. Here, the much less explored behavior of ferroelectric domain walls under applied alternating‐current (AC) voltages is discussed. An overview of the recent advances in the nanoscale characterization is provided that allows for resolving the dynamic responses of individual domain walls to AC fields. In addition, different examples are presented, showing the unusual AC electronic properties that arise at neutral and charged domain walls in the kilo‐ to gigahertz regime. It is concluded with a discussion about the future direction of the field and novel application opportunities, expanding domain‐wall‐based nanoelectronics into the realm of AC technologies.