Chromatic properties of InGaN-based red, green, and blue micro-LEDs grown on silicon substrate
Xi Zheng, Xiongfei Xu, Changdong Tong, Yi Fu, Mingbing Zhou, Tao Huang, Yijun Lü, Zhong Chen, Weijie Guo
Abstract
The optical and chromatic characteristics of InGaN-based micro-light-emitting diodes (micro-LEDs) grown on silicon substrates with blue, green, and red emissions have been investigated. The red micro-LEDs exhibited a large full-width at half maximum and a strong blueshift upon increasing current density. The 20 μm blue, green, and red micro-LEDs achieve a maximum external quantum efficiency of 8.2% at 2.65 A/cm2, 5.1% at 5 A/cm2, and 0.62% at 0.1 A/cm2, respectively, which is superior to their 8 μm counterparts. The dependences of a color gamut on the temperature and current density of InGaN-based tri-color micro-LEDs can provide guidance for improving the performance of full-color micro-LED displays.