EHD-jet patterned MoS <sub>2</sub> on a high- <i>k</i> dielectric for high mobility in thin film transistor applications
Thi Thu Thuy Can, Hak-Lim Ko, Woon‐Seop Choi
Abstract
Abstract Solution synthesis of MoS 2 precursor followed by direct printing could be an effective way to make printed electronic devices. A linear MoS 2 pattern was obtained by an electrohydrodynamic (EHD)-jet printer with a sol-gel system without chemical vapor deposition. The morphology of the MoS 2 after a transfer process was maintained without wrinkles or cracking, resulting in a smooth surface compared with that of spin-coated films. EHD-jet printed MoS 2 was transferred onto high- k dielectric Al 2 O 3 and used as a semiconductor layer in thin film transistor (TFT) devices. The printed MoS 2 TFT has relatively good electrical characteristics, such as a linear field effect mobility, current ratio, and low subthreshold swing of 47.64 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>±</mml:mo> </mml:math> 2.99 cm 2 V −1 s −1 , 7.39 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>±</mml:mo> </mml:math> 0.12 × 10 6 , and 0.7 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>±</mml:mo> </mml:math> 0.05 V decade −1 , respectively. This technique may have promise for future applications.