Advancing RF GaN HEMTs: A Perspective on Measurement and Characterization Techniques
Gian Piero Gibiino, Luís C. Nunes, Nicholas C. Miller
Abstract
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) continue to play a critical role in radio frequency (RF) applications. Precise characterization of GaN HEMTs under realistic operating conditions is required for accurate modeling and device performance evaluation. This article presents a literature review of the various characterization techniques applied to GaN HEMTs with their associated challenges, including transient measurements, trap characterization, low-frequency to high-frequency device characterization methods, as well as thermal, near-field, and reliability measurements.
Topics & Concepts
Characterization (materials science)Materials scienceOptoelectronicsRadio frequencyPerspective (graphical)Gallium nitrideHigh-electron-mobility transistorElectronic engineeringWide-bandgap semiconductorElectrical engineeringEngineeringComputer scienceNanotechnologyTransistorVoltageLayer (electronics)Artificial intelligenceGaN-based semiconductor devices and materialsRadio Frequency Integrated Circuit DesignAdvanced Power Amplifier Design