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Achieving junction stability in heavily doped epitaxial Si:P

Chung-En Tsai, Yu‐Hsiang Hsu, Iván Santos, Lourdes Pelaz, Jeffrey E. Kowalski, Jhe‐Wei Liou, Wei‐Yen Woon, Chih‐Kung Lee

2021Materials Science in Semiconductor Processing10 citationsDOIOpen Access PDF

Topics & Concepts

DopantMaterials scienceDopant ActivationDopingOptoelectronicsEpitaxySiliconAnnealing (glass)Condensed matter physicsNanotechnologyLayer (electronics)Composite materialPhysicsSemiconductor materials and devicesAdvancements in Semiconductor Devices and Circuit DesignSemiconductor materials and interfaces
Achieving junction stability in heavily doped epitaxial Si:P | Litcius