CdSe Quantum Dots Enable High Thermoelectric Performance in Solution‐Processed Polycrystalline SnSe
Wei Dou, Yaru Gong, Xinqi Huang, Yanan Li, Qingtang Zhang, Yuqi Liu, Qinxuan Xia, Qingyang Jian, Deshang Xiang, Di Li, Dewei Zhang, Shihua Zhang, Pan Ying, Guodong Tang
Abstract
Here, a high peak ZT of ≈2.0 is reported in solution-processed polycrystalline Ge and Cd codoped SnSe. Microstructural characterization reveals that CdSe quantum dots are successfully introduced by solution process method. Ultraviolet photoelectron spectroscopy evinces that CdSe quantum dots enhance the density of states in the electronic structure of SnSe, which leads to a large Seebeck coefficient. It is found that Ge and Cd codoping simultaneously optimizes carrier concentration and improves electrical conductivity. The enhanced Seebeck coefficient and optimization of carrier concentration lead to marked increase in power factor. CdSe quantum dots combined with strong lattice strain give rise to strong phonon scattering, leading to an ultralow lattice thermal conductivity. Consequently, high thermoelectric performance is realized in solution-processed polycrystalline SnSe by designing quantum dot structures and introducing lattice strain. This work provides a new route for designing prospective thermoelectric materials by microstructural manipulation in solution chemistry.