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Tunable electronic properties of AlAs/InP heterostructure via external electric field and uniaxial strain

Jiaheng Zhao, Lijun Luan, Chongrong Yuan, Jingliang Chen, Yan Zhang, Xing Wei, Jibin Fan, Lei Ni, Chen Liu, Yun Yang, Jian Liu, Ye Tian, Li Duan

2023The European Physical Journal Plus12 citationsDOI

Topics & Concepts

HeterojunctionSemiconductorMaterials scienceDirect and indirect band gapsBand gapOptoelectronicsElectric fieldCondensed matter physicsvan der Waals forceMonolayerElectronic band structureNanotechnologyChemistryPhysicsQuantum mechanicsMoleculeOrganic chemistry2D Materials and ApplicationsMXene and MAX Phase MaterialsNanowire Synthesis and Applications
Tunable electronic properties of AlAs/InP heterostructure via external electric field and uniaxial strain | Litcius