Interface Influence on the Photoelectric Performance of Transition Metal Dichalcogenide Lateral Heterojunctions
Jingtao Li, Yang Ma, Yufo Li, Shao‐Sian Li, Boxing An, Jingjie Li, Jiangong Cheng, Wei Gong, Yongzhe Zhang
Abstract
on/off ratio, 1874% external quantum efficiency, and ∼120 ms photoresponse speed, exhibiting a better photoelectric performance than that of the lateral ones with graded junctions.
Topics & Concepts
HeterojunctionRectificationMaterials sciencePhotoelectric effectOptoelectronicsChemical vapor depositionControllabilityQuantum efficiencyInterface (matter)Depletion regionNanotechnologySemiconductorVoltageElectrical engineeringComposite materialEngineeringCapillary numberCapillary actionApplied mathematicsMathematics2D Materials and ApplicationsMXene and MAX Phase MaterialsPerovskite Materials and Applications